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Entry to New Field Built-in DMOS FET with 40V withstand voltage
Charging IC for Camera Flash
MM3456
Announced on February 9, 2010
Overview
< MM3456 >, Mitsumi has developed a device capable of high-efficiency charging, including a DMOS FET with low on-resistance and 40V withstand voltage.
A maximum peak current of 2.0 A on the primary side of the transformer means that the flash capacitor can be charged at high speed.
We have also developed a small, highly reliable step-up transformer for the flash, and can offer the flash and transformer as a pair with matched characteristics.

§ Features
1.
Realizes high-efficiency charging thanks to built-in switching DMOS FET with 40 V withstand voltage and low on-resistance.
2.
Enables construction with reduced number of components thanks to detection of charging completion on primary side of transformer.
3.
Primary side peak current can be set to a maximum of 2.0 A (3 steps, 2 ranks) for high-speed charging of flash capacitor.
4.
Small package size (2.5 × 2.7 × 0.6 mm max.)

§ Main specifications
SW terminal peak current
1.0, 1.2, 1.4 A (1.6, 1.8, 2.0) 3 steps, 2 ranks
VCC current consumption
1.3 mA max.
Zero current detection voltage
50 mV (Vsw-VBAT)
Charging completion detection voltage 1
22 V ± 1% (Ta = 25ºC)
Charging completion detection voltage 2
1.2 V ± 1% (Ta = 25ºC)
Maximum on-time
100 usec.
Package
SSON-10
Dimensions
2.5 × 2.7 × 0.6 max. (Unit: mm)